DETAILED NOTES ON GERMANIUM

Detailed Notes on Germanium

s is always that with the substrate product. The lattice mismatch leads to a large buildup of strain Strength in Ge layers epitaxially grown on Si. This pressure Electricity is principally relieved by two mechanisms: (i) era of lattice dislocations at the interface (misfit dislocations) and (ii) elastic deformation of each the substrate as well as

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